HUANG De-Pei, ZHANG Li-Qian, LU Xiao-Yi, NAN Zhen, LU Zong-Huan, SONG Guan-Jiao, . PREPARATION OF BERBERINE FIELD EFFECT TRANSISTOR SENSORJ. Acta Pharmaceutica Sinica, 1987, 22(7): 545-548.
Citation: HUANG De-Pei, ZHANG Li-Qian, LU Xiao-Yi, NAN Zhen, LU Zong-Huan, SONG Guan-Jiao, . PREPARATION OF BERBERINE FIELD EFFECT TRANSISTOR SENSORJ. Acta Pharmaceutica Sinica, 1987, 22(7): 545-548.
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PREPARATION OF BERBERINE FIELD EFFECT TRANSISTOR SENSOR

    Abstract
  • Berberine-tetraphenylborate was studied as an electrically active material for electrode membrane. The membrane was coated on a platinum-wire connected with MOSFET paling electrode to make a berberine-ISFET. The berberine-ISFET showed Nernstian response in 10-2～10-6 mol/L berberine solution over pH 3.5～11.0 with a slope of 57±1 mV/decade.
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